Yonghao Jia ,Yuehang Xu*, Yongxin Guo,Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs，IEEE Transactions on Electron Devices，2019（early access）
发表时间：2018-12-16 点击次数：
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Yu Fu, Ruimin Xu, Yuehang Xu* , Jianjun Zhou, Qingzhi Wu, Yuechan Kong Yong Zhang, Tangsheng Chen, and Bo Yan,Characterization and Modeling of Hydrogen- Terminated MOSFETs With Single-Crystal and Polycrystalline Diamond, IEEE Electron Device Letters,39,11:1704-1707,2018
