Near-Strain-Free GaN/AlGaN Narrow Line Width UV Light Emission with Very Stable Wavelength on Excitation Power by Using Superlattices

2021-10-21 Hits:

Journal:ACS Applied Electronic Materials

Key Words:GaN, Light Emission, quantum well, nanowire

Abstract:Because of the strong strain in nitrides, superlattice layers have been used to release the strain in the QW and reduce the quantum confined Stark effect. However, few reports discuss comprehensively the strain relaxation behavior and optical performance of a GaN/AlGaN single quantum well (QW) with inserted GaN/AlGaN superlattices (SLs). In this work, we examined a group of graded Al content GaN/AlxGa1–xN SL layers under the GaN/Al0.3Ga0.7N single QW grown on c-plane sapphire. Both the excitation power and temperature dependence of the time-integrated micro-photoluminescence (μ-PL) and time-re

Indexed by:SCI

Discipline:Engineering

First-Level Discipline:Electronic science and technology

Document Type:M

Translation or Not:no

Date of Publication:2020-01-03

Date of Publication:2020-01-03