论文名称“A 2-20 GHz Ultrawideband High-Gain Low-Noise Amplifier With Enhanced Stability”。低噪声放大器（LNA）在 5G 无线、卫星通信、数据链路和雷达系统中得到了广泛应用，2–20 GHz 可覆盖多个频段的需求。本文旅提出了一种在 2-20 GHz 范围内工作的高增益 LNA ，采用90纳米 GaAs pHEMT 工艺以增强稳定性。所提出的改进级联拓扑结构集成了一个低通匹配网络，在级联单元的共源（CS）和共栅（CG）晶体管之间设置了一个串联电感和一个并联电容，从而在保持最低噪声和增益降级的情况下增强了稳定性。测量结果表明，所提出的LNA实现了25 dB 的增益，输入输出回波损耗优于10 dB，噪声系数（NF）低于1.5 dB。测试结果表明，整个频率范围内没有出现任何不稳定现象。工作主要完成人：王磊，程钰间。

论文链接：https://ieeexplore.ieee.org/document/10414016

Abstract- This letter discusses a high-gain low-noise amplifier (LNA) operating in the 2-20 GHz range, employing the 90-nm GaAs E-mode pseudomorphic high-electron-mobility-transistor (pHEMT) process for enhanced stability. The proposed modified cascode topology integrates a low-pass matching network, featuring a series inductor and a parallel capacitor between the common-source (CS) and common-gate (CG) transistors of the cascode cell, enhancing stability with minimal noise and gain degradation. Measurements indicate that the proposed LNA achieves a gain of 25 dB, with the input–output return loss better than 10 dB and an NF below 1.5 dB. Further testing demonstrates that the proposed LNA does not exhibit any instabilities over the entire frequency band from dc to 40 GHz.

Index Terms—cascode topology ,high-gain,low-noise，stability,wide band