location： Current position: Home >> Scientific Research >> Paper Publications

Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET

Hits:

Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics

Correspondence Author:Xiaochuan Deng

Volume:9

Issue:2

Page Number:2147-2152

Translation or Not:no

Date of Publication:2021-02-01

Pre One:A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

Next One:Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges
Recommended Ph.D.Supervisor

Address: Shahe Campus:No.4, Section 2, North Jianshe Road, 610054  |  Qingshuihe Campus:No.2006, Xiyuan Ave, West Hi-Tech Zone, 611731  |   Chengdu, Sichuan, P.R.China © 2010 University of Electronic Science and Technology of China. All Rights Reserved

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep