Current position: Home >> Scientific Research >> Patents

碳化硅MOSFET器件及其制作方法

Hits:

Affilication of Author(s):电子科技大学

Type of Patent:中国发明专利

State of Patent:授权

Service Invention or Not:no

Next One:一种碳化硅器件的栅槽制作方法
Recommended Ph.D.Supervisor

Address: Shahe Campus:No.4, Section 2, North Jianshe Road, 610054  |  Qingshuihe Campus:No.2006, Xiyuan Ave, West Hi-Tech Zone, 611731  |   Chengdu, Sichuan, P.R.China © 2010 University of Electronic Science and Technology of China. All Rights Reserved

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep