杜江锋

Professor

Gender:Male

Alma Mater:University of Electronic Science and Technology of China

Education Level:With Certificate of Graduation for Doctorate Study

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Recommended Ph.D.Supervisor

Paper Publications

Current position: Jiangfeng_Du > Scientific Research > Paper Publications

[36] Zhiyuan Bai, Jiangfeng Du*, Qi Xin, Ruonan Li, Qi Yu. "Simulation design of high reverse blocking high-K/low-K compound passivation AlGaN/GaN Schottky barrier diode with gated edge termination", Superlattices and Microstructures, 111:1000-1009 (2017) . (SCI)

Release time:2019-01-21 Hits:

Translation or Not:no

Pre One:[37] Jiangfeng Du*, Ruonan Li, Zhiyuan Bai, Yong Liu, Qi Yu. "High breakdown voltage GaN-on-insulator based heterojunction field effect transistor with a partial back barrier layer" , Superlattices and Microstructures, 111:760-766 (2017) . (SCI)

Next One:Jiangfeng Du, Kang Wang, Yong Liu, Zhiyuan Bai, Yang Liu, Zhihong Feng, Shaobo Dun, Qi Yu. "Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs", Solid-State Electronics, 129:1-5, (2017) (SCI)

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