杜江锋

Professor

Gender:Male

Alma Mater:University of Electronic Science and Technology of China

Education Level:With Certificate of Graduation for Doctorate Study

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Recommended Ph.D.Supervisor

Paper Publications

Current position: Jiangfeng_Du > Scientific Research > Paper Publications

[27] Jiangfeng Du, Dong Liu, Ziqi Zhao, Zhiyuan Bai, Liang Li, Jianghui Mo and Qi Yu. "Design of High Breakdown Voltage GaN Vertical HFETs with p-GaN Buried Buffer Layers for Power Switching Applications", Superlattices and Microstructures, 83: 251-260 (2015). (SCI)

Release time:2019-01-21 Hits:

Translation or Not:no

Pre One:[28] Jiangfeng Du, Dong Liu, Zhiyuan Bai, Yong Liu and Qi Yu. "Design of high breakdown voltage GaN-based vertical HFETs with p-GaN island structure for power applications", Superlattices and Microstructures, 85:690-696 (2015) . (SCI)

Next One:[26] Jiangfeng Du, Nanting Chen, Peilin Pan, et al. "High breakdown voltage AlGaN/GaN HEMT with high-K/low-K compound passivation", Electronics Letters, 51(1):104-106 (2015). (SCI)

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