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发表刊物:IEEE Sensors Journal
全部作者:Zewei Liu,Guiyun Tian
第一作者:Xiaofeng Li
通讯作者:Bin Gao
卷号:20
期号:21
页面范围:12961- 12971
是否译文:否
发表时间:2020-10-13
上一条:Jiangfeng Du, Dong Liu, Zhiyuan Bai, Nanting Chen, and Qi Yu. "Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer", J. Comput. Electron. , 15: 1334-1339, (2016) (SCI)
下一条:Jiangfeng Du, Nanting Chen, Zhiguang Jiang , Zhiyuan Bai, Yong Liu, Yang Liu, Qi Yu. "Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate", Solid-State Electronics, 115, A, 60-64 (2016). (SCI)