The Study of the Device Performance of the Hetero-junction Vertical Trench MOSFET
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发表刊物：2021 IEEE 4th International Conference on Electronics Technology (ICET)
摘要：In this paper, a Hetero-junction Vertical Trench MOSFET (HVTFET) is proposed. The HVTFET has a multilayer structure. Compared with FinFETs and GAAs, the HVTFET provides a new method to effectively overcome the DIBL effect of the small-size IC. The channel length Lch of HVTFET is determined by the thickness of the epitaxial channel region, so the Lch can be reduced greatly, therefore the operating frequency of the HVTFET can be greatly increased. The HVTFET can achieve higher Vdd by increasing the length of the low-doped drain region or reducing its doping concentration. The 7nm HVTFET...
论文类型：会议论文
文献类型：C
是否译文：否
发表时间：2021-05-07
发表时间：2021-05-07