A Novel Graphene Metal Semi-Insulator Semiconductor Transistor and Its New Super-Low Power Mechanism
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发表刊物：Scientific Reports
摘要：The state-of-art Si Matel-Oxide-Semiconductor Field-Effect-Transistor (MOS-FET) meets the problem
of the Power Consumption (PC) can not be effecively deceased guided by the Moore’s Law as before.
The GFET has the problem of the device can not be effectively turned off, since the band-gap of the graphene is zero. To solve these problems, noticing the amount of the carriers in the 2 dementional semiconductor material is limited, we propose a Matel-Semi-Insulator-Semiconductor Field-Effect- Transistor (MSIS-FET) to replace the traditional MOS-FET. We verify our idea by fabricating the graphene...
论文类型：期刊论文
是否译文：否
发表时间：2019-03-06
发表时间：2019-03-06