Gate extraction and injection field effect transistors and method for controlling its channel carrier amount
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所属单位：电子科技大学
专利说明：The methods of gate extraction and injection FET and channel carrier quantity control related to microelectronics technology and semiconductor technology. The gate extraction and injection FET of the invention is provided with a source, a drain, a gate...
申请号：US201916699760A
是否职务专利：否
申请日期：2019-12-02
公开日期：2021-10-12