Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: the case of GeS
点击次数：
备注：ACS Nano, 6 (10), 8868-8877, 20
全部作者：L. Cao, Y. Yu, G. P. Snigdha, L. Huang, C. Li
是否译文：否
点击次数：
备注：ACS Nano, 6 (10), 8868-8877, 20
全部作者：L. Cao, Y. Yu, G. P. Snigdha, L. Huang, C. Li
是否译文：否