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Awards and Honours

基于BCD/SOI工艺的单片功率集成技术研究

2020-07-08 Hits:

Granted by:中国电子科技集团公司

Level of Award:中国电子科技集团公司技术发明奖

Grade of Award:一等

Pre One:600-700伏超级结MOSFET工艺研发

Next One:功率高压MOS器件关键技术与应用

李泽宏

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:Professor

Recommended Ph.D.Supervisor 》

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