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On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device,

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Note:Journal of Optoelectronics and Advanced Materials, vol. 17, no. 11-12, pp. 1680-1688, 2015

All the Authors:G. Li, Z. Wen, Q. Yu, H. Liu,K. Xu*

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