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Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology,

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Note:Journal of Nanophotonics, vol. 7, no. 1, 073082, 2013

All the Authors:G. Li,K. Xu*

Translation or Not:no

Pre One:Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs,

Next One:On the design and optimization of three-terminal light-emitting device in silicon CMOS technology,

徐开凯

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:Professor E-Mail:

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