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A three terminal silicon-PMOSFET like light emitting device (LED) for optical intensity modulation,

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Note:IEEE Photonics Journal, vol. 4, no. 6, pp. 2159-2168, 2012

All the Authors:G. Li,K. Xu*

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Pre One:Stimulation of 450, 650 and 850 nm optical emissions from custom designed silicon LED devices by utilizing carrier energy and carrier momentum engineering,

Next One:A novel way to improve the quantum efficiency of silicon light emitting diode in a standard silicon complementary metal-oxide-semiconductor technology,

徐开凯

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:Professor E-Mail:

Recommended Ph.D.Supervisor 》

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