[21] K. Xu* et al. ,  Electro-optical modulation processes in Si-PMOSFET LEDs operating in the avalanche light emission mode,

[22] Yang Ou and  K. Xu* ,  Theoretical and numerical characterization of a 40Gbps long-haul multi-channel transmission system with dispersion compensation,

[23] G. Li ,  H. Chen ,  J. Polleux ,  L. Snyman ,  and  K. Xu* ,  Silicon light-emitting device with application in on-chip micro-opto-electro-mechanical and chemical-opto-electro micro systems,

[24] G. Li ,  W. Sun ,  J. Zhao ,  S. Liu ,  and  K. Xu* ,  Analysis of simulation of multi-terminal electro-optic modulator based on p-n junction in reverse bias,

[25] G. Li ,  W. Sun ,  Q. Yu ,  J. Zhao ,  S. Liu ,  and  K. Xu* ,  Opportunities for employing IGBT in photo-switch based on silicon avalanche LEDs,

[26] Z. Zhang ,  H. Liu ,  and  K. Xu* ,  Gate-controlled diode structure based electro-optical interfaces in standard Silicon-CMOS integrated circuitry,

[27] C. Viana ,  K. Ogudo ,  J. Polleux ,  K. Xu ,  and  L. Snyman ,  Higher intensity SiAvLEDs in a RF bipolar process through carrier energy and carrier momentum engineering,

[28] G. Li ,  Q. Yu ,  and  K. Xu* ,  Increased efficiency of silicon light-emitting device in standard Si-CMOS technology,

[29] G. Li ,  Z. Wen ,  Q. Yu ,  H. Liu ,  and  K. Xu* ,  On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device,

[30] Z. Zhang ,  Z. Zhang ,  and  K. Xu* ,  Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices,

[31] Z. Wen ,  Q. Yu ,  Z. Zhang ,  and  K. Xu* ,  Field-effect electroluminescence spectra of reverse-biased PN Junctions in silicon device for microdisplay,

[32] G. Li ,  W. Sun ,  J. Zhao ,  S. Liu ,  and  K. Xu* ,  A new silicon LED concept for future opto-coupler system applications in short-distance,

[33] L. Snyman ,  G. Li ,  Q. Yu ,  Z. Ma. Z. Li ,  C. Viana ,  J. Polleux ,  K. Ogudo ,  and  K. Xu* ,  Light-emitting devices in Si CMOS and RF bipolar integrated circuits,

[34] Q. Yu ,  K. Xu* ,  Z. Ma ,  R. Fan ,  and  X. Tang ,  Silicon substrate interconnection circuit design,

[35] G. Li ,  Q. Yu ,  C. Viana ,  K. Ogudo ,  J. Polleux ,  L. Snyman ,  and  K. Xu* ,  Silicon LEDs toward high frequency on-chip link,

[36] G. Li ,  Q. Yu ,  Z. Li ,  Z. Ma ,  W. Sun ,  S. Liu ,  and  K. Xu* ,  Design and fabrication of a monolithic optoelectronic integrated Si CMOS LED based on hot-carrier effect,

[37] K. Xu* ,  Integrated silicon directly modulated light source using P-Well in standard CMOS technology,

[38] X. Huang ,  D. Cheng ,  and  K. Xu* ,  Modal characteristics of coupled resonator vertical cavity laser diode,

[39] G. Sun ,  F. Lin ,  S. Ma ,  A. Zhang ,  W. Su ,  W. Sun* ,  R. Ye ,  J. Wei ,  K. Xu ,  S. Liu ,  and  C. Zhang ,  A novel high latch-up immunity electrostatic discharge protection device for power rail in high-voltage ICs,

[40] R. Hu ,  Y. Wang ,  L. Snyman ,  Q. Yu ,  J. Polleux ,  C. Viana ,  K. Ogudo ,  Y. Wang ,  J. Yuan ,  K. Xu* ,  and  Z. Zhang ,  Silicon light-emitting device for high speed analog-to-digital conversion,