Title of Paper:Pursuing enhanced oxidation resistance of ZrB₂ ceramics by SiC and WC co-doping

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Affiliation of Author(s):[1]Univ Elect Sci & Technol China, Natl Engn Res Ctr Electromagnet Radiat Control Ma, 2006 Xiyuan Rd, Chengdu 611731, Sichuan, Peoples R China;[2]Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, 2006 Xiyuan Rd, Chengdu 611731, Sichuan, Peoples R China;[3]Univ Elect Sci & Technol China, Minist Educ, Key Lab Multispectral Absorbing Mat & Struct, 2006 Xiyuan Rd, Chengdu 611731, Sichuan, Peoples R China;[4]Univ Elect Sci & Technol China, Sch Mat & Energy, 2006 Xiyuan Rd, Chengdu 611731, Sichuan, Peoples R China

Journal:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

Key Words:Ultra-high temperature ceramics; Zirconium diboride; Co-doping; Oxidation resistance

Abstract:The oxidative degradation of ZrB2 ceramics is the main challenge for its extensive application under high temperature condition. Here, we report an effective method for co-doping suitable compounds into ZrB2 in order to significantly improve its anti-oxidation performance. The incorporation of SiC and WC into ZrB2 matrix is achieved using spark plasma sintering (SPS) at 1800 degrees C. The oxidation behavior of ZrB2-based ceramics is investigated in the temperature range of 1000 degrees C-1600 degrees C. The oxidation resistance of single SiC-doped ZrB2 ceramics is improved due to the formation of silica layer on the surface of the ceramics. As for the WC-doped ZrB2, a dense ZrO2 layer is formed which enhances the oxidation resistance. Notably, the SiC and WC co-doped ZrB2 ceramics with relative density of almost 100% exhibit the lowest oxidation weight gain in the process of oxidation treatment. Consequently, the co-doped ZrB2 ceramics have the highest oxidation resistance among all the samples.

Document Type:Article

Volume:38

Issue:16

Page Number:5311-5318

ISSN No.:0955-2219

Translation or Not:no