副教授 硕士生导师
性别：男
出生日期：1984-08-02
学历：博士研究生毕业
学位：工学博士学位
学科：电子信息材料与元器件
通讯/办公地址：5c3a66c5f0a60de7a998f15a899a51ee691ea96078934ef3cd4c229208053985bfa39b1e43613441228b1c9c8ccc0d5bf401849fcdb392fe5bac1d28f902920340b1f6555124413970907e24f99f5afc34453efa58e49c28514f755115b542d645cd096b4516cbf0e9655661b66cf845e202255120bcd7321a941b31ef85d63f
移动电话：b2b51d1e1ec51c4b77d3d5660b82ce18048e8f8af12e931cc95b66d361dae20b0ae284b091dbdb1b71c284cfae46eabe129773756904beeca9945dfb62a3ff376aee8cbf0fc64816670e8fb4d7e839bcfbf18999f92d7c927c163d1319141ffa4b776e2eeb8b74c53fca28ed702fb46b52d34bd47f524b0711aef20d4d0b0084
邮箱：72178287baa200e2cffc8e0aab93981b50fa9c6dafe8a186946321c528c41fd54d7305d3c794c2e586d0bfc3b1c012a77632b57ed5e5cab11ffd83f63a98936e8f21a967ca1752941a3000f3d4916a164def030673f451b3606b369443e4f18d1e081eafe0dc49767726c8880b3505a53201e8f0e5903717bfd279f87c20cc2f
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所属单位：[1]Univ Elect Sci & Technol China, Sch Mat & Energy, Chengdu, Sichuan, Peoples R China;[2]Chengdu Univ Technol, Coll Mat & Chem & Chem Engn, Chengdu, Sichuan, Peoples R China;[3]Chengdu Fine Opt Engn Res Ctr, Chengdu, Sichuan, Peoples R China;[4]Dongfang Elect Corp, Lab Energy Storage & New Energy Mat Technol, Cent Res Inst, Chengdu, Sichuan, Peoples R China;[5]Xiamen Univ, Coll Mat, Xiamen, Fujian, Peoples R China;[6]Univ Elect Sci & Technol China, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu, Sichuan, Peoples R China;[7]Univ Sci & Technol China, Dept Mat Sci & Engn, Lab Mat Energy Convers, Hefei, Anhui, Peoples R China;[8]Phenikaa Univ, Phenikaa Inst Adv Study, Hanoi 10000, Vietnam;[9]A&A Green Phoenix Grp, PRATI, 167 Hoang Ngan, Hanoi 10000, Vietnam
发表刊物：JOURNAL OF ALLOYS AND COMPOUNDS
关键字：Photoluminescence; La3Si8N11O4:Eu phosphors; Carbon coating; Lattice parameters; White light-emitting diodes
摘要：In this work, Eu-doped La3Si8N11O4 phosphors with different doping concentrations are fabricated by solid state reaction method. A broad and asymmetric emission band that covers the wavelength range of 425-550 nm is observed. X-ray diffraction Rietveld refinement and X-ray absorption near edge structure (XANES) analyses reveal the co-existence of both trivalent and divalent states of Eu. By coating the phosphor particles with an ultrathin carbon layer using CVD technique, followed by an annealing in N-2 at 1600 degrees C, the trivalent ions Eu3+ are reduced to Eu2+, resulting in a significant enhancement of quantum efficiency, both internal and external, and absorption efficiency. The application of the La3Si8N11O4:Eu in white light-emitting diodes is tested by coating the phosphor onto a near-UV LED chip in combination with the red-, green- and blue-emitting phosphors ([Ca, Sr]AlSiN3:Eu, (R)-Sialon:Eu and BaMgAl10O17:Eu, respectively). It is demonstrated that the presence of the La3Si8N11O4:Eu phosphor significantly enhances the color rendering index of the device, showing its great potential for wLEDs applications. (C) 2019 Elsevier B.V. All rights reserved.
文献类型：Article
卷号：799
页面范围：360-367
ISSN号：0925-8388
是否译文：否
