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发表刊物:IET Circuits, Devices and Systems,
全部作者:T. Cao, X. Tang, S. He,F. You
页面范围:476-484
是否译文:否
上一条:High-efficiency single-ended class-E/F2 power amplifier with finite DC feed inductor
下一条:The effects of limited drain current and on resistance on the performance of an LDMOS inverse class-E power amplifier,