周琦
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发表刊物：2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
是否译文：否
发表时间：2024-10-17
上一条：The non-monotonic instability of VTH and Rds,on in P-GaN Gate HEMTs Under Repetitive Short Circuit Stress: The role of electric-field & self heating effect
下一条：Threshold voltage instability of p-GaN gate HEMT in 48-12V buck converter & its impact on circuit power loss variation
