兰长勇，电子科技大学光电科学与工程学院副教授。2012年7月入职电子科技大学。2016.08 - 2019.02在香港城市大学任Senior Research Associate。主要从事电子和光电子材料与器件方面的研究工作。主持和参与多项国家级和省部级项目。在Nat. Commun., Adv. Mater., Adv. Opt. Mater., ACS Nano, Nanoscale, Nano Res.等期刊发表SCI收录论文90余篇，被引用4800余次，H因子35。为中国微米纳米学会高级会员。

所在课题组硕士生毕业均去往国内知名高科技企业，如华为、普源精电等。

指导硕士发表多篇论文：

6. J. Zeng, et al., PtSe₂ Thickness Engineering Towards Fast Response, Large Linear Dynamic Range, and Broadband PtSe₂/Si Heterojunction Photodetector, Journal of Materials Chemistry C, 2025, DOI: 10.1039/D5TC01116G

5. Y.Y. Wei, et al., Ultrasensitive, Fast and Flexible Piezoresistive Strain Sensor Based on Te Nanomesh, Chemical Engineering Journal, 2025, 511, 162024.

4. X.Y. Jia, et al., Weak interlayer interaction and enhanced electron mobility in multilayer WS₂ achieved through a layer‑by‑layer wet transfer approach, Journal of Materials Science, 2024, 59, 13591.

3. Y.Y. Wei, et al., Te nanomesh/black-Si van der Waals Heterostructure for High-Performance Photodetector, Advanced Optical Materials, 2024, 12, 2400056.

2. Y.Y. Wei, et al., Recent Advances in Photodetectors Based on Two-Dimensional Material/Si Heterojunctions, Applied Sciences, 2023, 13, 11037.

1. X.Y. Jia, et al., Recent advances in two-dimensional materials in infrared photodetectors (invited), Infrared and Laser Engineering, 2022, 51, 20220065.