location： Current position: Home >> Scientific Research >> Paper Publications

Achieving Zero Switching Loss in Silicon Carbide MOSFET

Hits:

Journal:IEEE Transactions on Power Electronics

Document Type:M

Volume:34

Issue:12

Page Number:12193-12199

Translation or Not:no

Date of Publication:2019-12-01

Pre One:Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges

Next One:An Enhanced High Frequency Performance Sic MOSFET With Self-adjusting P-shield Region Potential
Recommended Ph.D.Supervisor

Address: Shahe Campus:No.4, Section 2, North Jianshe Road, 610054  |  Qingshuihe Campus:No.2006, Xiyuan Ave, West Hi-Tech Zone, 611731  |   Chengdu, Sichuan, P.R.China © 2010 University of Electronic Science and Technology of China. All Rights Reserved

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep