location： Current position: Home >> Scientific Research >> Paper Publications

An Enhanced High Frequency Performance Sic MOSFET With Self-adjusting P-shield Region Potential

Hits:

Journal:Semiconductor Science and Technology

Correspondence Author:Xiaochuan Deng

Volume:37

Issue:7

Page Number:085019

Translation or Not:no

Date of Publication:2022-07-01

Pre One:Achieving Zero Switching Loss in Silicon Carbide MOSFET

Next One:Impact of Termination Region on Switching Loss for SiC MOSFET
Recommended Ph.D.Supervisor

Address: Shahe Campus:No.4, Section 2, North Jianshe Road, 610054  |  Qingshuihe Campus:No.2006, Xiyuan Ave, West Hi-Tech Zone, 611731  |   Chengdu, Sichuan, P.R.China © 2010 University of Electronic Science and Technology of China. All Rights Reserved

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep