杜江锋

Professor

Gender:Male

Alma Mater:University of Electronic Science and Technology of China

Education Level:With Certificate of Graduation for Doctorate Study

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Recommended Ph.D.Supervisor

Paper Publications

Current position: Jiangfeng_Du > Scientific Research > Paper Publications

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-/low- compound dielectric structure

Release time:2025-03-04 Hits:

Journal:Chinese Physics B

Volume:32

Issue:1

Page Number:017306

Translation or Not:no

Date of Publication:2023-01-01

Pre One:Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

Next One:[44] Zhiyuan Bai, Jiangfeng Du*, Hao Wang, Xiaoyun Li, Qi Yu. "Simulation Design of High Baliga’s Figure of Merit Normally-off P-GaN gate AlGaN/GaN Heterostructure Field Effect Transistors with Junction Field Plates", Superlattices and Microstructures, 123:257-266 (2018) . (SCI)

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