杜江锋

Professor

Gender:Male

Alma Mater:University of Electronic Science and Technology of China

Education Level:With Certificate of Graduation for Doctorate Study

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Recommended Ph.D.Supervisor

Paper Publications

Current position: Jiangfeng_Du > Scientific Research > Paper Publications

[44] Zhiyuan Bai, Jiangfeng Du*, Hao Wang, Xiaoyun Li, Qi Yu. "Simulation Design of High Baliga’s Figure of Merit Normally-off P-GaN gate AlGaN/GaN Heterostructure Field Effect Transistors with Junction Field Plates", Superlattices and Microstructures, 123:257-266 (2018) . (SCI)

Release time:2019-01-21 Hits:

Translation or Not:no

Pre One:Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-/low- compound dielectric structure

Next One:[43] Zhiyuan Bai, Jiangfeng Du*, Qi Xin, Ruonan Li, Qi Yu. "Numerical Analysis of Reverse Blocking Enhancement in High-K Passivation AlGaN/GaN Schottky Barrier Diode with Gated Edge Termination", Superlattices and Microstructures, 114:143-153 (2018) . (SCI)

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