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Growth and band alignment of Bi2Se3 topological insulator on Hterminated Si(111) van der Waals surface

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Journal:Applied Physics Letters

First Author:Handong Li

Volume:102

Issue:7

Page Number:074106

Translation or Not:no

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李含冬

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Alma Mater:Institute of Physics, Chinese Adademy of Sciences Degree:Doctor of Science Status:Professor School/Department:School of Materials and Energy Business Address:Room 102, East Block, Computer Science Building, Shahe Campus of UESTC, Chengdu, PRC. Contact Information: E-Mail:

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