[1] Handong Li ,  Novel Type-II InAs/AlSb Core–Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection, Advanced Functional Materials,

[2] Handong Li and  Weiran Shi ,  Tin Selenide (SnSe): Growth, Properties, and Applications, Advacned Science,

[3] Handong Li ,  Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1 x 1 surfaces, New Journal of Physics, vol. 12, pp. 073007,

[4] Handong Li and  Lei Gao ,  Patterning Bi2Se3 single-crystalline thin films on Si(111) substrates using strong oxidizing acids, RSC Advances, vol. 7, no. 51, pp. 32294,

[5] Handong Li ,  Monolithic integration of metastable α-In2Se3 thin film on H-passivated Si(1 1 1) for photovoltaic applications, Journal of Physics D: Applied Physics, vol. 49, no. 14, pp. 145108,

[6] Handong Li ,  Reactive interface formation and Co-induced (root 7x root 7) superstructure on a GaN(0001) pseudo-(1x1) substrate surface, Physical Review B, vol. 81, no. 23, pp. 233302,

[7] Handong Li ,  Growth of multilayers of Bi2Se3/ZnSe: Heteroepitaxial interface formation and strain, Applied Physics Letters, vol. 98, no. 4, pp. 043104,

[8] Handong Li ,  Growth and band alignment of Bi2Se3 topological insulator on Hterminated Si(111) van der Waals surface, Applied Physics Letters, vol. 102, no. 7, pp. 074106,

[9] Handong Li ,  The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator, New Journal of Physics, vol. 12, pp. 103038,

[10] Handong Li and  Wuyang Ren ,  Epitaxial growth and thermal-conductivity limit of single-crystalline Bi2Se3/In2Se3 superlattices on mica, Nano Research, vol. 10, no. 1, pp. 247,

[11] Handong Li ,  Effect of the starting surfaces of GaN on defect formation in epitaxial Co thin films, Journal of Applied Physics, vol. 110, no. 9, pp. 093501,

[12] Handong Li and  Lei Gao ,  The high-yield growth of Bi2Se3 nanostructures via facile physical vapor deposition, Vacuum, vol. 140, pp. 58,