Title of Paper:Pursuing enhanced oxidation resistance of ZrB2 ceramics by SiC and WC co-doping

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Affiliation of Author(s):[1] National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, 611731, China; [2] State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, 611731, China; [3] Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, 611731, China; [4] School of Materials and Energy, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, 611731, China

Journal:Journal of the European Ceramic Society

Key Words:Ceramic materials - Spark plasma sintering - Ablation - Cobalt compounds - Oxidation - Silica - Silicon carbide - Silicon oxides - Zirconia - Zirconium

Abstract:The oxidative degradation of ZrB2 ceramics is the main challenge for its extensive application under high temperature condition. Here, we report an effective method for co-doping suitable compounds into ZrB2 in order to significantly improve its anti-oxidation performance. The incorporation of SiC and WC into ZrB2 matrix is achieved using spark plasma sintering (SPS) at 1800 °C. The oxidation behavior of ZrB2-based ceramics is investigated in the temperature range of 1000 °C–1600 °C. The oxidation resistance of single SiC-doped ZrB2 ceramics is improved due to the formation of silica layer on the surface of the ceramics. As for the WC-doped ZrB2, a dense ZrO2 layer is formed which enhances the oxidation resistance. Notably, the SiC and WC co-doped ZrB2 ceramics with relative density of almost 100% exhibit the lowest oxidation weight gain in the process of oxidation treatment. Consequently, the co-doped ZrB2 ceramics have the highest oxidation resistance among all the samples. ? 2018 Elsevier Ltd

Document Type:Journal article (JA)

Volume:38

Issue:16

Page Number:5311-5318

ISSN No.:09552219

Translation or Not:no