Title of Paper:Highly Stable Modified Phosphors of Ba₂SiO₄:Eu<SUP>2+</SUP> by Forming a Robust Hydrophobic Inorganic Surface Layer of Silicon-Oxy-Imide-Carbide

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Affiliation of Author(s):[1]Univ Sci & Technol China, Chinese Acad Sci, Dept Mat Sci & Engn, Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China;[2]Hefei Guoxuan High Tech Power Energy Co Ltd, 599 Daihe Rd, Hefei 230011, Anhui, Peoples R China;[3]Univ Ioannina, Mat Sci & Engn Dept, GR-45110 Ioannina, Greece;[4]Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;[5]Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Rd, Chengdu 610051, Peoples R China

Journal:JOURNAL OF PHYSICAL CHEMISTRY C

Abstract:A highly stable hydrophobic Ba2SiO4:Eu3+ (BSO) phosphor was produced by forming a robust hydrophobic inorganic silicon-oxy-imide-carbide layer on its surface. The process for developing this layer involved coating, ammonolysis, and pyrolysis of chlorosilane. The tightly adhered coating layer had a lotus, leaf-like micro- and nanohierarchical structure and contained CH3 groups, which enhanced the hydrophobicity of the modified phosphor significantly. The modified phosphors treated at 500 degrees C exhibited remarkable stability in their emission spectra, even after exposure to high-pressure water steam at 100 degrees C for 48 h, which is attributed to the high stability of the surface layer.

Document Type:Article

Volume:121

Issue:21

Page Number:11616-11622

ISSN No.:1932-7447

Translation or Not:no