
副教授 硕士生导师
性别:男
出生日期:1984-08-02
学历:博士研究生毕业
学位:工学博士学位
学科:电子信息材料与元器件
通讯/办公地址:5c3a66c5f0a60de7a998f15a899a51ee691ea96078934ef3cd4c229208053985bfa39b1e43613441228b1c9c8ccc0d5bf401849fcdb392fe5bac1d28f902920340b1f6555124413970907e24f99f5afc34453efa58e49c28514f755115b542d645cd096b4516cbf0e9655661b66cf845e202255120bcd7321a941b31ef85d63f
移动电话:b2b51d1e1ec51c4b77d3d5660b82ce18048e8f8af12e931cc95b66d361dae20b0ae284b091dbdb1b71c284cfae46eabe129773756904beeca9945dfb62a3ff376aee8cbf0fc64816670e8fb4d7e839bcfbf18999f92d7c927c163d1319141ffa4b776e2eeb8b74c53fca28ed702fb46b52d34bd47f524b0711aef20d4d0b0084
邮箱:72178287baa200e2cffc8e0aab93981b50fa9c6dafe8a186946321c528c41fd54d7305d3c794c2e586d0bfc3b1c012a77632b57ed5e5cab11ffd83f63a98936e8f21a967ca1752941a3000f3d4916a164def030673f451b3606b369443e4f18d1e081eafe0dc49767726c8880b3505a53201e8f0e5903717bfd279f87c20cc2f
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所属单位:[1] National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, 611731, China; [2] State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, 611731, China; [3] Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, 611731, China; [4] School of Materials and Energy, University of Electronic Science and Technology of China, 2006 Xiyuan Road, Chengdu, 611731, China
发表刊物:Journal of the European Ceramic Society
关键字:Ceramic materials - Spark plasma sintering - Ablation - Cobalt compounds - Oxidation - Silica - Silicon carbide - Silicon oxides - Zirconia - Zirconium
摘要:The oxidative degradation of ZrB2 ceramics is the main challenge for its extensive application under high temperature condition. Here, we report an effective method for co-doping suitable compounds into ZrB2 in order to significantly improve its anti-oxidation performance. The incorporation of SiC and WC into ZrB2 matrix is achieved using spark plasma sintering (SPS) at 1800 °C. The oxidation behavior of ZrB2-based ceramics is investigated in the temperature range of 1000 °C–1600 °C. The oxidation resistance of single SiC-doped ZrB2 ceramics is improved due to the formation of silica layer on the surface of the ceramics. As for the WC-doped ZrB2, a dense ZrO2 layer is formed which enhances the oxidation resistance. Notably, the SiC and WC co-doped ZrB2 ceramics with relative density of almost 100% exhibit the lowest oxidation weight gain in the process of oxidation treatment. Consequently, the co-doped ZrB2 ceramics have the highest oxidation resistance among all the samples. ? 2018 Elsevier Ltd
文献类型:Journal article (JA)
卷号:38
期号:16
页面范围:5311-5318
ISSN号:09552219
是否译文:否
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