电子科技大学  English 
尹良君

副教授 硕士生导师

性别:男

出生日期:1984-08-02

学历:博士研究生毕业

学位:工学博士学位

学科:电子信息材料与元器件

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Highly Stable Modified Phosphors of Ba<sub>2</sub>SiO<sub>4</sub>:Eu<SUP>2+</SUP> by Forming a Robust Hydrophobic Inorganic Surface Layer of Silicon-Oxy-Imide-Carbide

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所属单位:[1]Univ Sci & Technol China, Chinese Acad Sci, Dept Mat Sci & Engn, Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China;[2]Hefei Guoxuan High Tech Power Energy Co Ltd, 599 Daihe Rd, Hefei 230011, Anhui, Peoples R China;[3]Univ Ioannina, Mat Sci & Engn Dept, GR-45110 Ioannina, Greece;[4]Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;[5]Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Rd, Chengdu 610051, Peoples R China

发表刊物:JOURNAL OF PHYSICAL CHEMISTRY C

摘要:A highly stable hydrophobic Ba2SiO4:Eu3+ (BSO) phosphor was produced by forming a robust hydrophobic inorganic silicon-oxy-imide-carbide layer on its surface. The process for developing this layer involved coating, ammonolysis, and pyrolysis of chlorosilane. The tightly adhered coating layer had a lotus, leaf-like micro- and nanohierarchical structure and contained CH3 groups, which enhanced the hydrophobicity of the modified phosphor significantly. The modified phosphors treated at 500 degrees C exhibited remarkable stability in their emission spectra, even after exposure to high-pressure water steam at 100 degrees C for 48 h, which is attributed to the high stability of the surface layer.

文献类型:Article

卷号:121

期号:21

页面范围:11616-11622

ISSN号:1932-7447

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