周琦
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发表刊物：IEEE Transactions on Electron Devices
卷号：69
期号：10
页面范围：5496-5502
是否译文：否
上一条：Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses
下一条：A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density
