周琦
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发表刊物：IEEE Transactions on Electron Devices
卷号：70
期号：8
页面范围：4081-4086
是否译文：否
上一条：A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor FieldEffect Transistor with a Buried Back Gate for Gallium Nitride SingleChip Complementary Logic Circuits
下一条：High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility
