周琦
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发表刊物：2024 1EEE 17th Intermational Conference on Solid-State and Integrated Circuit Techmology(ICSICT)
文献类型：C
是否译文：否
发表时间：2024-10-15
上一条：Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range
下一条：The non-monotonic instability of VTH and Rds,on in P-GaN Gate HEMTs Under Repetitive Short Circuit Stress: The role of electric-field & self heating effect
