Andrew Xuan Li
At present, guided by the wide bandgap silicon carbide semiconductor market demand, focusing on how to optimally use high-reliability and high-performance silicon carbide power devices (power chips), silicon carbide power single-bipolar devices ( Design, preparation, modeling, reliability), silicon carbide-compatible packaging, power electronic devices (high power density, high efficiency, high reliability) using silicon carbide power devices. In particular, researchers who are interested in the above research directions (microelectronics and solid-state electronics, power electronics and other related interdisciplinary backgrounds) are welcome to cooperate in related scientific research.
Xuan Li, University of Electronic Science and Technology of China, Associate Researcher (the college ranked 1st among applicants for admission in the same period). He has been systematically engaged in the research of the third-generation wide band gap silicon carbide semiconductor power devices and their applications in power electronic systems. As the person in charge or chief researcher, he has participated in nearly 20 national natural science fund key/general/youth projects, national key research and development plan projects, national science and technology major projects, and corporate projects for many times, with a cumulative funding of more than 10 million yuan
