Andrew Xuan Li
At present, guided by the wide bandgap silicon carbide semiconductor market demand, focusing on how to optimally use high-reliability and high-performance silicon carbide power devices (power chips), silicon carbide power single-bipolar devices ( Design, preparation, modeling, reliability), silicon carbide-compatible packaging, power electronic devices (high power density, high efficiency, high reliability) using silicon carbide power devices. In particular, researchers who are interested in the above research directions (microelectronics and solid-state electronics, power electronics and other related interdisciplinary backgrounds) are welcome to cooperate in related scientific research.
More than 30 articles have been published in this field. Published journal papers as the first author/corresponding author in the top journals IEEE Electron Device Letter, IEEE Trans. on Electron Device in the field of electronic devices and the top journals in the field of power electronics IEEE Trans. on Industrial Electronics, IEEE Trans. on Power Electronics 10 Articles; 5 papers have been published in the top conferences IEEE ISPSD, ICSCRM, and IEEE WiPDA in the above-mentioned fields.
Some representative works in recent years:
[1] Xuan Li, Xing Tong, Rui Hu, Yi Wen, Hao Zhu, Xiaochuan Deng, Yongkui Sun, Wanjun Chen, Song Bai, Bo Zhang, "Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET," in IEEE Journal of Emerging and Selected Topics in Power Electronics. pp1-1. 2020.
[2] Xiaochuan Deng, Hao Zhu, Xuan Li, Xing Tong, Shufeng Gao, Yi Wen, Song Bai, Wanjun Chen, Kun Zhou, Bo Zhang, "Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions," in IEEE Transactions on Power Electronics, vol. 35, no. 8, pp. 8524-8531, Aug. 2020
[3] Xuan Li, Xu Li, Pengkun Liu, Suxuan Guo, Liqi Zhang, Alex Q. Huang, Xiaochuan Deng, Bo Zhang, "Achieving Zero Switching Loss in Silicon Carbide MOSFET," in IEEE Transactions on Power Electronics, vol. 34, no. 12, pp. 12193-12199, Dec. 2019.
[4] Xuan Li, Ben Tan, Alex Q. Huang, Bo Zhang, Yumeng Zhang, Xiaochuan Deng, Zhaoji Li, Xu She, IEEE, Fangzhou Wang, and Xing Huang, "Impact of Termination Region on Switching Loss for SiC MOSFET," in IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 1026-1031, Feb. 2019.
[5] Xuan Li, Xing Tong, Alex Q. Huang, Hong Tao, Kun Zhou, Yifan Jiang, Junning Jiang, Xiaochuan Deng, Xu She, Bo Zhang, Yourun Zhang, Qi Tian, "SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode, " in IEEE Transactions on Electron Devices, vol. 65, no. 1, pp. 347-351, Jan. 2018.
[6] Xuan Li, Junning Jiang, Alex Q. Huang, Suxuan Guo, Xiaochuan Deng, Bo Zhang, Xu She, "A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications, "in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8268-8276, Oct. 2017.
[7] Hao Li, Bin Tang, Xuan Li, Zhenjun Qing, Yingxiang Li, Han Yang, Qiang Wang, Shuren Zhang, "The structure and properties of 0.95MgTiO3–0.05CaTiO3ceramics doped with Co2O3." Journal of Materials Science, September 2014, Volume 49, Pages 5850-5855.
[8] Xuan Li, Xu Li, Liping Yang, Alex Q. Huang, Pengkun Liu, Xiaochuan Deng, Bo Zhang, " Switching Loss Model of SiC MOSFET Promoting High Frequency Applications," 2019 IEEE 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, pp. 231-234, 2019.
[9] Xuan Li, Xing Tong, Alex Q. Huang, Shi Qiu, Xu She, Xiaochuan Deng, Bo Zhang, " Split Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss, "in International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington DC, pp. 765-769, June 2018.
[10] Xuan Li, Wenchi Yang, Lijun Li, Xiaochuan Deng, Bo Zhang, "Three-Section Adjusted Field Limited Rings Applicable for SiC 2200V Power MOSFETs, "in Electrochemical Society (ECS) Meeting, National Harbor, MD, vol. 80, no. 1, pp. 181-187, October 2017.
[11] Xuan Li, Liqi Zhang, Suxuan Guo, Yang Lei, Alex Q. Huang, Bo Zhang, "Understanding switching losses in SiC MOSFET: Toward lossless switching, " in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Blacksburg, VA, pp. 257-262, November 2015.
Xuan Li, University of Electronic Science and Technology of China, Associate Researcher (the college ranked 1st among applicants for admission in the same period). He has been systematically engaged in the research of the third-generation wide band gap silicon carbide semiconductor power devices and their applications in power electronic systems. As the person in charge or chief researcher, he has participated in nearly 20 national natural science fund key/general/youth projects, national key research and development plan projects, national science and technology major projects, and corporate projects for many times, with a cumulative funding of more than 10 million yuan
