周琦
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发表刊物:Journal of Semiconductors
关键字:Ni/β-Ga2O3 interface, first-principles calculations, Schottky contact, fluorine plasma, electrotherm
页面范围:(Accepted)
是否译文:否
下一条:High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility