周琦
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专利成果
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Granted

1. An ESD protection circuit based on group III-nitrides, CN114301044B, 2022

2. A gallium nitride 3D-RESURF field-effect transistor and manufacturing method thereof,  CN113078204A, 2021

3. A full GaN integrated gate drive circuit with dead time control, CN113162373A, 2021

4. A full GaN integrated half-bridge dead time regulation circuit, CN111181375A, 2020

5. GaN MIS gate-controlled mixed-channel power field-effect transistor and manufacturing method thereof, CN111370470A, 2020

6. A GaN device dynamic on-resistance measurement circuit, CN111289799A, 2020

7. A GaN longitudinal reverse junction FET, CN111293176A, 2020

8. A half-bridge circuit straight-through protection circuit, CN109921779A, 2019

9. A current-limiting diode, CN107507858A, 2017

10. A hybrid anode diode with a Nano-Fin gate structure, CN107527952A, 2017

11. A GaN heterojunction longitudinal reverse FET, CN107482059A, 2017

12. GaN hetero-junction vertical inverse-conduction field effect transistor, CN107393954A, 2017

13. Three-dimensional multi-trench gate enhanced HEMT device and preparation method thereof, CN105609551A, 2015




Personal information

Professor
Supervisor of Doctorate Candidates

Honors and Titles : 中国电子学会优秀科技工作者(2017)
四川省电子学会“电子科学技术奖”一等奖(2015)

Gender : Male

Alma Mater : Hong Kong University of Science and Technology

Education Level : With Certificate of Graduation for Doctorate Study

Degree : Doctor of Philosophy

Status : Professor

School/Department : School of Electronic Science and Engineering(National Exemplary School of Microelectronics), University of Electronic Science and Technology of China

Discipline:Microelectronics and Solid State Electronics

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