恭喜靖贵，唐磊，高欢，书婷和彭嵘！

Jinggui's work on Self-Aligned p-GaN Gate Controlled Diode is accepted by ISPSD-Japan(2025).

"Self-Aligned p-GaN Gate Controlled Diode with Tunable Forward Conduction/Reverse Blocking Properties for High Efficiency Buck Converter"

Lei Tang's work on Reliability of 650V p-GaN Gate HEMTs Under Long-Term HTRB Stress is accepted by ISPSD-Japan(2025).

"A Comprehensive Study on Device Reliability and Failure Mechanism of 650V p-GaN Gate HEMTs Under Long-Term HTRB Stress Beyond 150 ℃"

Huan Gao's work on Heavy-Ion Radiation-Induced Dynamic On-Resistance Degradation for P-GaN Gate HEMTs  is accepted by ISPSD-Japan(2025).

"Heavy-Ion Radiation-Induced Dynamic On-Resistance Degradation for P-GaN Gate HEMTs"

Rong Peng and Shuting's work on Surge Current Capability and Different Failure Modes of 650 V p-GaN HEMTs  is accepted by ISPSD-Japan(2025).

"Comparison Study on Surge Current Capability and Different Failure Modes of 650 V p-GaN HEMTs"

恭喜匡黎，啟航，王龙！

Kuangli's work on Device Instability in the Third Quadrant of Schottky-Type p-GaN Gate HEMTs is accepted by ICSICT-Zhuhai(2024).

"Device Instability in the Third Quadrant of Schottky-Type p-GaN Gate HEMTs: The Hole Defficiency & Trapping Effect"

Qihang's work on The UIS Withstand Capability of 650 V p-GaN Gate HEMTs  is accepted by ICSICT-Zhuhai(2024).

"The UIS Withstand Capability and Device Failure Mechanism of 650 V p-GaN Gate HEMTs"

Wanglong's work on The instability of Vth and Rds,on in P-GaN Gate HEMTs Under Repetitive ShortCircuit Stress is accepted by ICSICT-Zhuhai(2024).

"The non-monotonic instability of VTH and Rds,on in P-GaN Gate HEMTs Under Repetitive ShortCircuit Stress: The role of electric-field & selfheating effect"

恭喜匡黎！

Kuangli's work on E-mode GaN p-MISFET is accepted by ISPSD-Bremen(2024).

"A Novel E-mode GaN p-MISFET with Hole Compensation Effect Achieving High Drain Current and Ultra-Low Subthreshold Slope"

恭喜凯弟！

Kaidi's work on Threshold voltage instability of p-GaN gate HEMT in 48-12V buck converter is accepted by ISPSD-Bremen(2024).

"Threshold voltage instability of p-GaN gate HEMT in 48-12V buck converter & its impact on circuit power loss variation"

恭喜文娟！

Wenjuan's work on trap dynamic detection is accepted by 12MTC-Malaysia(2023).

"Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation"

恭喜佳瑞！

Jiarui's Master's Thesis "Research on Reliability and Mechanism of p-GaN Gate HEMTs Under Off-state Stress" was awarded as the Outstanding Master's Thesis of UESTC in 2023.

(优秀硕士学位论文)

恭喜周琦老师团队！

Prof. Zhou was awarded the second prize of natural science of the Ministry of Education in 2022.

(教育部自然科学奖二等奖)

恭喜文娟和超武！

Wenjuan and Chaowu's work on Novel Fault Diagnosis Strategy for Analog System is accepted by PHM-Yantai(2022).

"Mixture Test Optimization for Analog System"

恭喜佳瑞！

Jiarui was awarded the Excellent Graduate of Sichuan Province(四川省优秀毕业生). 

Jiarui was awarded the Excellent Graduate of the UESTC(电子科技大学优秀毕业生).

Jiarui was awarded the Outstanding Postgraduate Students of the UESTC(电子科技大学优秀研究生) .

恭喜鹏翔！

Pengxiang was awarded the honor of Academic Young Seeds of the UESTC(电子科技大学学术青苗).

Pengxiang was awarded the Outstanding Postgraduate Students of the UESTC(电子科技大学优秀毕业生).

恭喜靖宇！

Jingyu was awarded the Excellent Paper Award of the 24th Annual Conference of China Power Supply Society.

(中国电源学会第二十四届学术年会优秀论文奖)

恭喜明哲和竞研!

Mingzhe was awarded the Outstanding Postgraduate Cadre of the UESTC(电子科技大学优秀研究生干部).

Mingzhe was awarded the Outstanding Postgraduate Teaching Assistant of the UESTC(电子科技大学优秀研究生助教).

Jingyan was awarded the Outstanding Postgraduate Cadre of the UESTC(电子科技大学优秀研究生干部) .

Congrats to Jingyu、Jiarui、Luohua and Kuangli !

Jingyu、Jiarui and Luohua was awarded the first prize of the Southwest Division Integrated Circuit Innovation and Entrepreneurship Competition. 

(集成电路创新创业大赛西南赛区一等奖)

Jingyu、Jiarui and Luohua was awarded the third prize of the National Integrated Circuit Innovation and Entrepreneurship Competition.

(集成电路创新创业大赛全国三等奖)

Kuangli was awarded the third prize of the China Postgraduate Student Innovation "Core" Competition.

(中国研究生创“芯”大赛全国三等奖)

Congrats to Chaowu、Jiarui and Kuangli !

Chaowu's work on device degradation and recovery dynamics of p-GaN Gate HEMTs is accepted for oral presentation by ISPSD(2022).

(ISPSD是功率器件领域的顶级会议，在GaN领域，中国大陆仅有两篇入选口头报告)

"Physical Mechanism of Device Degradation & its Recovery Dynamics of p-GaN Gate HEMTs Under Repetitive Short Circuit Stress"

Jiarui's work on Self-heating effect of p-GaN Gate HEMTs is accepted by IEEE-TED(2022).

"The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique"

Kuangli 's work on Novel E-mode GaN p-MOSFET is accepted by J. Phys. D: Appl. Phys(2022).

"A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density"

Congrats to Liyang and Pengxiang !

Liyang's work on Characteristic of UTB AlGaN/GaN Heterostructure is accepted by IEEE-TED(2022).

"The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure"

Pengxiang's work on Novel Trench-Gated Vertical GaN Transistor is accepted by IEEE-TED(2022).

"A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage"

Congrats to Prof. Zhou !

Prof. Zhou is recommended as the Young Scholar Editor of Journal of Semiconductor (JOS).

Congrats to Prof. Zhou !

Prof. Zhou is recommended as the Associate/Area Editor of Microelectronic Engineering (MEE).

Congrats to Prof. Zhou !

Prof. Zhou is recommended as the TPC member of International Conference on Solid State Devices and Materials(SSDM 2021-2023).

SSDM has been held for more than 50 years by the Japan Society of Applied Physics, giving the potential influence to the engineering field.

Congrats to Liyang and Kuangli !

Liyang's work on low leakage AlGaN/GaN power diode is accepted for oral presentation by ICSICT2020.

"A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristics"

Kuangli 's work on novel GaN JFET is accepted for oral presentation by ICSICT2020.

"A Novel GaN Junction Field-Effect Transistor with Intrinsic Reverse Conduction Capability"

Peng Huang wins the best student paper award of CPSSC'2019  !

Congrats to Peng Huang! Huang presents his study on vertical GaN superjunction FETs for kilo-volts breakdown.