[1] K. Li ,  D. Cheng ,  and  K. Xu* ,  Super-high speed fiber optical communication systems design and simulation,

[2] X. Huang ,  D. Cheng ,  and  K. Xu* ,  Multimode communication system used in local area network,

[3] K. Xu et al. ,  L. Li ,  and  X. Huang ,  An 0.35μm/CMOS 2.4Gb/s LVDS for high-speed DAC,

[4] D. Cheng and  K. Xu* ,  Modeling and analysis of check-in procedure by simulation,

[5] K. Xu* ,  Comparison of dispersion compensation in a 40Gbps WDM optical communication system,

[6] G. Li and  K. Xu* ,  A light-emitting-device (LED) with monolithic integration on bulk silicon in a standard CMOS technology,

[7] G. Li and  K. Xu* ,  Silicon electro-optic modulator based on the theory of gate-controlled diode,

[8] G. Li and  K. Xu* ,  The path forward: silicon electro-optical interface for modern complementary metal-oxide-semiconductor integrated circuits (CMOS ICs),

[9] G. Li ,  H. Chen ,  L. Snyman ,  K. Ogudo ,  B. Huang ,  and  K. Xu* ,  Silicon light-emitting device in standard CMOS technology,

[10] J. Polleux ,  Y. Wang ,  X. Huang ,  Q. Yu ,  Z. Zhang ,  S. Wu ,  and  K. Xu* ,  A perspective on high speed analog to digital conversion with silicon light-emitting devices,

[11] L. Snyman ,  Q. Yu ,  J. Polleux ,  K. Ogudo ,  N. Ning ,  and  K. Xu* ,  Light emission in silicon: from device physics to applications,

[12] K. Xu* ,  Si-LED- Silicon light-emitting device in standard CMOS technology,

[13] K. Xu* ,  Electro-optical modulation processes in Si-MOS LEDs operating in the avalanche light emission mode,

[14] K. Xu ,  J. Polleux ,  and  L. Snyman* ,  Stimulation of 450, 650 and 850 nm optical emissions from custom designed silicon LED devices by utilizing carrier energy and carrier momentum engineering,

[15] G. Li and  K. Xu* ,  A three terminal silicon-PMOSFET like light emitting device (LED) for optical intensity modulation,

[16] G. Li and  K. Xu* ,  A novel way to improve the quantum efficiency of silicon light emitting diode in a standard silicon complementary metal-oxide-semiconductor technology,

[17] G. Li and  K. Xu* ,  Hot-carrier induced photon-emission in silicon metal-oxide-semiconductor field-effect-transistor,

[18] K. Xu* ,  Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs,

[19] G. Li and  K. Xu* ,  Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology,

[20] K. Xu* ,  On the design and optimization of three-terminal light-emitting device in silicon CMOS technology,